The Hynix Semiconductor SO-DIMM 8GB Hynix DDR3-1600 CL11 represents a powerful and high-performance solution for demanding computing requirements. This memory module offers dual data rate synchronous operation (DDR3) technology, providing an outstanding speed of 1600 MHz while adhering to the CL11 timing specification, ensuring low latency and optimal data transfer rates. The memory controller chip, HMT41GS6, is specially designed for maximum reliability and stability, ensuring optimal performance even under rigorous operating conditions.
The SO-DIMM module is available in a standard low-voltage (LV) configuration, operating at a safe and energy-efficient 1.35 volts. This feature makes it ideal for use in a wide range of IT applications, from data centers and servers to workstations and laptops. The module is also certified for military standard (BFR8) and PB (particle board), ensuring additional protection for critical applications and applications in harsh environments. Overall, the Hynix Semiconductor SO-DIMM 8GB Hynix DDR3-1600 CL11 is an exceptional choice for those seeking a reliable, high-performance, and reliable memory module that meets the demands of modern computing applications.
Hynix Semiconductor SO-DIMM 8GB Hynix DDR3-1600 CL11 (512Mx8) LV (1,35 V) HMT41GS6 BFR8 A PB is ideal for systems requiring a high-performance but cost-effective DDR3 module for servers and workstations.
